FDN352AP: Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ

Datasheet: MOSFET – Single, P-Channel, POWERTRENCH®
Rev. 3 (70kB)
Product Overview
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Product Change Notification
This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
Features
 
  • -1.3A, -30V
  • RDS(ON) = 180 mΩ @ VGS = -10V
  • -1.1A, -30V
  • RDS(ON) = 300 mΩ @ VGS = -4.5V
  • High performance trench technology for extremely low RDS(ON).
  • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability
Applications
  • This product is general usage and suitable for many different applications.
  • Notebook computer power management
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDN352AP Active
Pb-free
Halide free
FDN352AP SOT-23-3 527AG 1 260 Tape and Reel 3000 $0.1323
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : >50K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDN352AP  
 $0.1323 
Pb
H
 Active   
P-Channel
Single
-30
25
-2.5
-1.3
0.5
-
300
180
-
1.4
150
SOT-23-3
Case Outlines
527AG   
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