MOSFETs | FDN336P

Single P-Channel Logic Level PowerTrench® MOSFET -20V, -1.3A, 200mΩ

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Overview

This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Power Management
  • DC/DC converter
  • Battery Charging Circuit
  • Portable Electronics
  • -1.3 A, -20 V.
  • RDS(ON) = 0.20Ω @ VGS= -4.5 V
  • RDS(ON) = 0.27 Ω @ VGS= -2.5 V
  • Low gate charge (3.6 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 inthe same footprint

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDN336P

Active

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

Single

-20

8

-1.5

-1.3

0.5

270

200

-

4.4

3.6

330

$0.1284

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