MOSFETs | FDN302P

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -2.4A, 55mΩ

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Overview

This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection
  • –20 A, –2.4 V.
  • RDS(ON)= 0.055Ω @ VGS = –4.5 V
  • RDS(ON) = 0.080Ω @ VGS = –2.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the samefootprint

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDN302P

Active

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

Single

-20

12

-1.5

-2.4

0.5

80

55

-

12

9

882

$0.1148

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