FDMT800150DC: N-Channel Dual CoolTM 88 PowerTrench® MOSFET 150V, 99A, 6.5mΩ

Datasheet: MOSFET – N-Channel, POWERTRENCH®, DUAL COOL® 88 150 V, 99 A, 6.5 mΩ
Rev. 2 (193kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Features
 
  • Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 15 A
  • Max rDS(on) = 8.4 mΩ at VGS = 6 V, ID = 13 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • Low profile 8x8mm MLP package
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
Applications
  • Oring FET / Load Switch
  • Synchronous Rectification
  • DC-DC Conversion
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMT800150DC Active
Pb-free
Halide free
FDMT800150DC PQFN-8 483AQ 1 260 Tape and Reel 3000 $3.4615
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMT800150DC  
 $3.4615 
Pb
H
 Active   
N-Channel
Single
150
±20
4
99
156
-
-
6.5
-
77
5660
PQFN-8
Case Outlines
483AQ   
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.