N-Channel Dual Cool™ 88 PowerTrench® MOSFET 100V, 162A, 2.95mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • Oring FET / Load Switch
  • Synchronous Rectification
  • DC-DC Conversion
  • Max rDS(on) = 2.95 mΩ at VGS = 10 V, ID = 24 A
  • Max rDS(on) = 4.46 mΩ at VGS = 6 V, ID = 19 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • Low profile 8x8mm MLP package
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Package Type

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MSL Type

MSL Temp (°C)

Container Type

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMT800100DC

Active

Pb

A

H

P

DFNW-8

1

260

REEL

3000

Y

N-Channel

Single

100

±20

4

162

156

-

-

2.95

-

50

5595

$3.5167

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