FDMT800100DC

N-Channel Dual Cool™ 88 PowerTrench^® MOSFET 100V, 162A, 2.95mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench^® process. Advancements in both silicon and Dual Cool^TM package technologies have been combined to offer the lowest r_DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications

Oring FET / Load Switch
Synchronous Rectification
DC-DC Conversion

Features

Max r_DS(on) = 2.95 mΩ at V_GS = 10 V, I_D = 24 A
Max r_DS(on) = 4.46 mΩ at V_GS = 6 V, I_D = 19 A
Advanced Package and Silicon combination for low r_DS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
Low profile 8x8mm MLP package
MSL1 robust package design
100% UIL tested
RoHS Compliant

Material Composition

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MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMT800100DC

Active

DFNW-8

507AR

260

REEL

3000

N-Channel

Single

100

±20

162

156

2.95

5595

$3.5167

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MOSFETs | FDMT800100DC

N-Channel Dual Cool™ 88 PowerTrench® MOSFET 100V, 162A, 2.95mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Dual Cool™ 88 PowerTrench^® MOSFET 100V, 162A, 2.95mΩ