MOSFETs | FDMS8680

N-Channel PowerTrench® MOSFET 30V, 35A, 7.0mΩ

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Overview

The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

  • This product is general usage and suitable for many different applications.
  • Low Side for Synchronous Buck to Power Core Processor
  • Secondary Side Synchronous Rectifier
  • Low Side Switch in POL DC/DC Converter
  • Oring FET / Load Switch
  • Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14 A
  • Max rDS(on) = 11.0 mΩ at VGS = 4.5 V, ID = 11.5 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • RoHS compliant

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS8680

Active

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

N-Channel

Single

30

20

3

35

50

-

11

7

13

10

1195

$0.8869

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