N-Channel PowerTrench® MOSFET 60V, 234A, 1.65mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance andyet maintain superior switching performance.

  • Primary Switch in insolated DC-DC
  • Synchronous Rectifier
  • Load Switch
  • Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
  • Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS86550

Active

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

Single

60

±20

4.5

234

156

-

-

1.65

-

90

8235

$2.8444

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