N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

  • DC-DC Merchant Power Supply
  • Primary Switch in insolated DC-DC
  • Synchronous Rectifier
  • Load Switch
  • Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A
  • Max rDS(on) = 11.7 mΩat VGS = 4.5 V, ID = 11.5 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS86520L

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

60

8.2

N-Channel

Single

±20

3

22

69

-

11.7

-

21

3470

$0.7728

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