N-Channel PowerTrench® MOSFET 80V, 44A, 11.7mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

  • DC-DC Merchant Power Supply
  • Motor Bridge Switch
  • Synchronous Rectifier
  • Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A
  • Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS86320

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

80

11.7

N-Channel

Single

±20

4.5

44

69

-

-

-

24

1985

$0.6169

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