FDMS86263P

P-Channel PowerTrench^® MOSFET -150V, -22A, 53mΩ

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench^® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

Applications

This product is general usage and suitable for many different applications

Features

Max r_DS(on)= 53 mΩ at V_GS= -10 V, I_D = -4.4 A
Max r_DS(on) = 64 mΩ at V_GS = -6 V, I_D = -4 A
Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Q_g
This product is optimised for fast switching applications as well as load switch applications
100% UIL tested
RoHS Compliant

Material Composition

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS86263P

Active

PQFN-8

483AE

260

REEL

3000

P-Channel

Single

-150

±25

-4

-22

384

2935

$1.2629

Product Number:

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MOSFETs | FDMS86263P

P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel PowerTrench^® MOSFET -150V, -22A, 53mΩ