N-Channel Power Trench® MOSFET 100V, 16.5A, 56mΩ

Favorite

Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • DC-DC Merchant Power Supply
  • Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A
  • Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS8622

Loading...

Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

100

56

N-Channel

Single

±20

4

16.5

31

-

-

10

2.8

301

$0.4478

More Details

Show More

1-25 of 25

Products per page

Jump to :