FDMS86200DC

N-Channel Dual Cool^TM 56 Shielded Gate PowerTrench^® MOSFET 150V, 40A, 17mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench^® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest r_DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications

Energy Generation & Distribution

Features

Shielded Gate MOSFET Technology
Dual Cool™ Top Side Cooling PQFN package
Max r_DS(on) = 17 mΩ at V_GS = 10 V, I_D = 9.3 A
Max r_DS(on)= 25 mΩ at V_GS = 6 V, I_D = 7.8 A
High performance technology for extremely low r_DS(on)
100% UIL tested
RoHS Compliant

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Package Type

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MSL Type

MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS86200DC

Active

DFN-8

506EG

260

REEL

3000

N-Channel

Single

150

±20

125

2110

$1.8885

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDMS86200DC

N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150V, 40A, 17mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Dual Cool^TM 56 Shielded Gate PowerTrench^® MOSFET 150V, 40A, 17mΩ