FDMS86163P

P-Channel PowerTrench^® MOSFET -100V, -50A, 22mΩ

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Overview

This P-Channel MOSFET is produced using an advanced Power Trench^® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Applications

Mobile Comm Infrastructure

Features

Max r_DS(on)= 22 mΩ at V_GS = -10 V, I_D = -7.9 A
Max r_DS(on) = 30 mΩ at V_GS = -6 V, I_D= -5.9 A
Very low R_DS(on) mid voltage P-channel silicon technology optimised for low Q_g
This product is optimised for fast switching applications as well as load switch applications
100% UIL tested
RoHS Compliant

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS86163P

Active

PQFN-8

483AE

260

REEL

3000

P-Channel

Single

-100

±25

-4

-50

104

3070

$1.131

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDMS86163P

P-Channel PowerTrench® MOSFET -100V, -50A, 22mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel PowerTrench^® MOSFET -100V, -50A, 22mΩ