MOSFETs | FDMS86163P

P-Channel PowerTrench® MOSFET -100V, -50A, 22mΩ

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Overview

This P-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • Mobile Comm Infrastructure
  • Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
  • Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
  • Very low RDS(on) mid voltage P-channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDMS86163P

Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

P-Channel

Single

-100

±25

-4

-50

104

-

-

22

-

26

3070

$1.131

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