FDMS8320LDC: N-Channel Dual CoolTM 56 Power Trench® MOSFET 40V, 192A, 1.1mΩ

Datasheet: MOSFET – N-Channel, DUAL COOL® 56, POWERTRENCH® 40 V, 192 A, 1.1 mΩ
Rev. 3 (267kB)
Product Overview
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Product Change Notification
This N-Channel MOSFET is produced using an advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Features
 
  • Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
  • Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
Applications
  • Energy Generation & Distribution
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMS8320LDC Active
Pb-free
Halide free
FDMS8320LDC DFN-8 506EG 1 260 Tape and Reel 3000 $1.2561
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS8320LDC  
 $1.2561 
Pb
H
 Active   
N-Channel
Single
40
±20
3
192
125
-
1.5
1.1
-
57
8310
DFN-8
Case Outlines
506EG   
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