FDMS8018

N-Channel PowerTrench^® MOSFET 30V, 175A, 1.8mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r_DS(on), fast switching speed ang body diode reverse recovery performance.

Applications

Consumer

Features

Max r_DS(on) = 1.8 mΩ at V_GS = 10 V, I_D = 30 A
Max r_DS(on) = 2.4 mΩ at V_GS = 4.5 V, I_D = 26 A
Advanced Package and Silicon combination for low r_DS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant

Material Composition

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS8018

Active

PQFN-8

483AE

260

REEL

3000

N-Channel

Single

175

2.4

1.8

3935

$0.657

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MOSFETs | FDMS8018

N-Channel PowerTrench® MOSFET 30V, 175A, 1.8mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel PowerTrench^® MOSFET 30V, 175A, 1.8mΩ