N-Channel PowerTrench® MOSFET 30V, 9.5mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 14 A
  • Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS7694

Active

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

Single

30

20

3

13.2

27

-

14.5

9.5

48

7

1060

$0.2535

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