MOSFETs | FDMS7620S

Dual N-Channel PowerTrench® MOSFET 30V

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Overview

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization. The low switching loss “High Side” MOSFET is complementory by a low conduction loss “Low Side” SyncFET.

  • Notebook PC
  • Q1: N-Channel
    Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 10.1 A
    Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 7.5 A
  • Q2: N-Channel
    Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12.4 A
    Max rDS(on) = 14.2 mΩ at VGS = 4.5 V, ID = 10.9 A
  • Pinout optimized for simple PCB design
  • Thermally efficient dual Power 56 Package
  • RoHS Compliant

Material Composition

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS7620S-F106

Active

Pb

A

H

P

DFN-8

506DR

1

260

REEL

3000

Y

N-Channel

Dual

20

20

3

Q1: 13.0, Q2: 22.0

Q1: 2.2; Q2: 2.5

-

Q1: 30, Q2: 14.2

Q1: 20, Q2: 11.2

62

7.9

1050

$0.48

More Details

FDMS7620S

Active

Pb

A

H

P

DFN-8

506DR

1

260

REEL

3000

Y

N-Channel

Dual

20

20

3

Q1: 13.0, Q2: 22.0

Q1: 2.2; Q2: 2.5

-

Q1: 30, Q2: 14.2

Q1: 20, Q2: 11.2

62

7.9

1050

$0.4921

More Details

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