MOSFETs | FDMS6673BZ

P-Channel PowerTrench® MOSFET -30V, -82A, 6.8mΩ

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Overview

The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A
  • Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A
  • Advanced Package and Silicon combination for low rDS(on)
  • HBM ESD protection level of 8 kV typical (Note 3)
  • MSL1 robust package design
  • RoHS Compliant

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS6673BZ

Active

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

N

P-Channel

Single

-30

25

-3

-82

73

-

12.5

6.8

43

52

4444

$0.7705

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