MOSFETs | FDMS5672

N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

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Overview

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A
  • Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A
  • Typ Qg = 32nC at VGS = 10 V
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS5672

Active

Pb

A

H

P

DFN-8

506DP

1

260

REEL

3000

Y

N-Channel

Single

60

±20

4

22

78

-

-

11.5

97

32

2100

$1.564

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