FDMS4D0N12C: N-Channel Shielded Gate PowerTrench® MOSFET 120V, 118A, 4.0mΩ

Datasheet: Power MOSFET, Single N-Channel, 120 V, 4.0 mOhm, 118 A
Rev. 3 (251kB)
Product Overview
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Product Change Notification
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
 
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
  • Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant
Applications   End Products
  • This product is general usage and suitable for many different applications.
 
  • AC-DC and DC-DC Power Supplies
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMS4D0N12C Active
Pb-free
Halide free
FDMS4D0N12C PQFN-8 483AF 1 260 Tape and Reel 3000 $1.5301
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMS4D0N12C  
 $1.5301 
Pb
H
 Active   
N-Channel
Single
120
+-20V
4
118
2.7
4
58
4565
PQFN-8
Case Outlines
483AF   
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