N-Channel UltraFET Trench® MOSFET 250V, 14A, 122mΩ

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Overview

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 122 mΩ at VGS = 10 V, ID = 2.8 A
  • Max rDS(on) = 130 mΩ at VGS = 6 V, ID = 1.7 A
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant

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Product

Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMS2734

Active

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

N-Channel

Single

250

±20

4

14

78

-

-

122

21

30

1775

$2.3906

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