N-Channel UltraFET Trench® MOSFET 250V, 14A, 122mΩ

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Overview

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 122 mΩ at VGS = 10 V, ID = 2.8 A
  • Max rDS(on) = 130 mΩ at VGS = 6 V, ID = 1.7 A
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS2734

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Active

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

250

122

N-Channel

Single

±20

4

14

78

-

-

21

30

1775

$2.3906

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