N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ

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Overview

UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A
  • Typ Qg = 31nC at VGS = 10 V
  • Low Miller Charge
  • Optimized efficiency at high frequencies
  • UIS Capability (Single pulse and Repetitive pulse)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS2572

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Active

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

150

47

N-Channel

Single

±20

4

27

78

-

-

-

31

1960

$0.9386

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