FDMS2572

N-Channel UltraFET Trench^® MOSFET 150V, 27A, 47mΩ

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Overview

UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low r_DS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 47mΩ at V_GS = 10V, I_D = 4.5A
Typ Q_g = 31nC at V_GS = 10 V
Low Miller Charge
Optimized efficiency at high frequencies
UIS Capability (Single pulse and Repetitive pulse)
RoHS Compliant

Material Composition

Product Change Notification

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS2572

Active

DFN-8

506DP

260

REEL

3000

N-Channel

Single

150

±20

1960

$0.9386

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDMS2572

N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel UltraFET Trench^® MOSFET 150V, 27A, 47mΩ