GreenBridgeTM 2 Series of High-Efficiency Bridge Rectifiers

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Overview

FDMQ8205A is GreenBridgeTM2 series of quad MOSFETs for a bridge application so that the input will be insensitive to the polarity of a power source coupled to the device. Many known bridge rectifier circuits can be configured using typical diodes. The conventional diode bridge has relatively high power loss that is undesirable in many applications. Especially, Power over Ethernet (PoE) Power Device (PD) application requires high-efficiency bridges because it should be operated with the limited power delivered from Power Source Equipment (PSE) which is classified by IEEE802.3at. FDMQ8205A is configured with low rDS(on) dual P-ch MOSFETs and N-ch MOSFETs so that it can reduce the power loss caused by the voltage drop, compared to the conventional diode bridge. FDMQ8205A enables the application to maximize the available power and voltage and to eliminate the thermal design problems in PoE PD applications.
FDMQ8205A GreenBridgeTM2 is compatible with IEEE802.3 at PoE standard by not compromising detection and classification.

  • This product is general usage and suitable for many different applications.
  • IP Phones
  • Network Cameras
  • Wireless Access Points
  • Thin Clients
  • Microcell
  • Femtocell
  • Low Power Loss GreenBridgeTM Replaces Diode Bridge
  • Self Driving Circuitry for MOSFETs
  • Low rDS(on) 100V Rated MOSFETs
  • Maximizing Available Power and Voltage
  • Eliminating Thermal Design Problems
  • IEEE802.3at Compatible
    Meet Detection and Classification Requirement
    Work with 2 and 4-pair Architecture
    Small Backfeed Voltage
  • Compact MLP 4.5x5 Package

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V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

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RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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Pricing ($/Unit)

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FDMQ8205A

Active

Pb

A

H

P

WDFN-12

1

260

REEL

3000

Y

Complementary

Quad

-

-

-

-

2.5

-

-

-

-

-

-

$1.3741

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