Dual N-Channel and Dual P-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers

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Overview

This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.

  • Central Office

  • Q1/Q4: N-Channel
    Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
    Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
  • Substantial efficiency benefit in PD solutions
  • Q2/Q3: P-Channel
    Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
    Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMQ8203

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CAD Model

Pb

A

H

P

WDFN-12

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

WDFN-12

Low-Medium Voltage

Standard

0

Dual

0

±100

N: 110, P: 190

±20

Q1,Q4:4.0, Q2,Q3: -3.0

N: 6.0, P: -6.0

Q1: 22, Q2:37

-

-

-

6.4

Q1/Q4= 158, Q2/Q3: 639

Q1/Q4: 0.8 Q2/Q3: 2.6

Q1/Q4: 21 Q2/Q3: 26

Q1/Q4: 41 Q2/Q3: 46

Q1/Q4: 2.6 Q2/Q3: 24

$0.5996

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