FDMQ8203

Dual N-Channel and Dual P-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers

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Overview

This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.

Applications

Central Office

Features

Q1/Q4: N-Channel
Max r_DS(on)= 110 mΩ at V_GS = 10 V, I_D = 3 A
Max r_DS(on) = 175 mΩ at V_GS = 6 V, I_D = 2.4 A
Substantial efficiency benefit in PD solutions
Q2/Q3: P-Channel
Max r_DS(on) = 190 mΩ at V_GS = -10 V, I_D = -2.3 A
Max r_DS(on)= 235 mΩ at V_GS = -4.5 V, I_D = -2.1 A
RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_gs (V)

V_gs(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

FDMQ8203

Active

WDFN-12

511CS

260

REEL

3000

Complementary

PowerTrench® T1

WDFN-12

Low-Medium Voltage

Standard

Dual

±100

N: 110, P: 190

±20

Q1,Q4:4.0, Q2,Q3: -3.0

N: 6.0, P: -6.0

Q1: 22, Q2:37

6.4

Q1/Q4= 158, Q2/Q3: 639

Q1/Q4: 0.8 Q2/Q3: 2.6

Q1/Q4: 21 Q2/Q3: 26

Q1/Q4: 41 Q2/Q3: 46

Q1/Q4: 2.6 Q2/Q3: 24

$0.5996

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Low/Medium Voltage MOSFETs | FDMQ8203

Dual N-Channel and Dual P-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers

Overview

Product List

Email Sales