MOSFETs | FDME910PZT

P-Channel PowerTrench® MOSFET -20V, -8A, 24mΩ

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Overview

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

  • Mobile Handsets
  • Portable Devices
  • Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
  • Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
  • Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • HBM ESD protection level > 2 kV typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDME910PZT

Last Shipments

Pb

A

H

P

UDFN-6

517DV

1

260

REEL

5000

N

P-Channel

Single

-20

8

-1.5

-8

2.1

31

24

-

3

15

1586

Price N/A

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