P-Channel PowerTrench® MOSFET -12V, -8A, 22mΩ

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Overview

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

  • Mobile Handsets
  • Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
  • Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
  • Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDME905PT

Active

Pb

A

H

P

UDFN-6

1

260

REEL

5000

Y

P-Channel

Single

-12

8

-1

-8

2.1

26

22

-

5.5

14

1740

$0.2573

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