FDME820NZT

N-Channel PowerTrench^® MOSFET 20V, 9A, 18mΩ

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CAD Model

Overview

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the r_DS(ON) @ V_GS = 1.8 V on special MicroFET leadframe.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 18 mΩ at V_GS = 4.5 V, I_D = 9 A
Max r_DS(on) = 24 mΩ at V_GS= 2.5 V, I_D = 7.5 A
Max r_DS(on) = 32 mΩ at V_GS = 1.8 V, I_D = 7 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level >2.5kV (Note 3)
RoHS Compliant

Material Composition

Product Change Notification

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MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDME820NZT

Active

UDFN-6

517DV

260

REEL

5000

N-Channel

Single

2.1

8.5

865

$0.3143

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDME820NZT

N-Channel PowerTrench® MOSFET 20V, 9A, 18mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel PowerTrench^® MOSFET 20V, 9A, 18mΩ