Complementary PowerTrench® MOSFET ±20V

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Overview

This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.
The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max. RDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4A
    Max. RDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9A
    Max. RDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5A
    Max. RDS(on) = 160 mΩ at VGS= 1.5 V, ID = 2.1A
  • Q2: P-Channel
    Max. RDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3A
    Max. RDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8A
    Max. RDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5A
    Max. RDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V (see datasheet Note 3)
  • RoHS Compliant

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Product

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDME1034CZT

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Active

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

5000

Y

±20

-

Complementary

Dual

8

±1

N: 2.8, P: -2.6

1.4

N:86, P: 213

N: 66, P: 142

-

5.5

305

$0.3452

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