N-Channel Shielded Gate PowerTrench® MOSFET 60V, 87A, 4.3mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

  • DC-DC Merchant Power Supply
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
  • Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86570LET60

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

60

4.3

N-Channel

Single

±20

3

87

65

-

6.5

-

29

4790

$1.1275

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