N-Channel Power Trench® MOSFET 60V, 22A, 7.9mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

  • DC-DC Merchant Power Supply
  • Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
  • Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86520L

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

60

7.9

N-Channel

Single

±20

3

22

40

-

11.7

-

21

3420

$0.8887

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