MOSFETs | FDMC86262P

P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.

  • Industrial
  • Portable and Wireless
  • Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A
  • Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A
  • Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
  • Optimised for Fast Switching Applications as well as Load Switch Applications
  • 100% UIL Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDMC86262P

Active

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

P-Channel

Single

-150

±25

-4

-2

40

-

-

307

-

5.6

632

$0.4242

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