FDMC86262P

P-Channel PowerTrench^® MOSFET -150 V, -2 A, 307 mΩ

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench^® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.

Applications

Industrial
Portable and Wireless

Features

Max r_DS(on) = 307 mΩ at V_GS = -10 V, I_D = -2 A
Max r_DS(on) = 356 mΩ at V_GS = -6 V, I_D = -1.8 A
Very Low r_DS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
Optimised for Fast Switching Applications as well as Load Switch Applications
100% UIL Tested
RoHS Compliant

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MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMC86262P

Active

WDFN-8

511DH

260

REEL

3000

P-Channel

Single

-150

±25

-4

-2

307

5.6

632

$0.4242

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MOSFETs | FDMC86262P

P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel PowerTrench^® MOSFET -150 V, -2 A, 307 mΩ