P-Channel PowerTrench® MOSFET -150V, -9A, 160mΩ

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

  • Industrial
  • Portable and Wireless
  • Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
  • Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
  • Very low RDS(on) mid voltage P channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86261P

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

-150

160

P-Channel

Single

±25

-4

-9

40

-

-

-

11

1021

$0.6831

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