N-Channel Shielded Gate PowerTrench® MOSFET 100V, 43A, 14mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and orring functions.

  • DC-DC Merchant Power Supply
  • Extended TJ rating to 175°C
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
  • Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC86160ET100

Active

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

Single

100

±20

4

43

65

-

-

14

-

9.8

968

$0.98

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