FDMC86160

N-Channel Power Trench^® MOSFET 100V, 43A, 14mΩ

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CAD Model

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench^® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low R_DS(on) is required in small spaces such as High performance VRM, POL and orring functions.

Applications

DC-DC Merchant Power Supply

Features

Shielded Gate MOSFET Technology
Max r_DS(on) = 14 mΩ at V_GS = 10 V, I_D= 9 A
Max r_DS(on) = 23 mΩ at V_GS = 6 V, I_D = 7 A
High performance technology for extremely low r_DS(on)
Termination is Lead-free and RoHS Compliant

Material Composition

Product Change Notification

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMC86160

Active

PQFN-8

483AW

260

REEL

3000

N-Channel

Single

100

±20

9.8

968

$0.9237

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDMC86160

N-Channel Power Trench® MOSFET 100V, 43A, 14mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Power Trench^® MOSFET 100V, 43A, 14mΩ