MOSFETs | FDMC86139P

P-Channel PowerTrench® MOSFET -100V, -15A, 67mΩ

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Overview

This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
  • Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
  • Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL Tested
  • RoHS Compliant

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Package Type

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MSL Type

MSL Temp (°C)

Container Type

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC86139P

Active

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

P-Channel

Single

-100

±25

-4

-15

40

-

-

67

-

9.8

1001

$0.6714

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