N-Channel Power Trench® MOSFET 100V, 7.5A, 103mΩ

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Overview

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S Zener has been added to enhance ESD voltage level.

  • Consumer
  • Maximum RDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
  • Maximum RDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
  • HBM ESD protection level >3 KV typical
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC86116LZ

Active

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

Single

100

±20

2.2

7.5

19

-

153

103

-

2

232

$0.3319

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