N-Channel Shielded Gate Power Trench® MOSFET 40V, 80A, 2.1mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

  • DC-DC Merchant Power Supply
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A
  • Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC8360L

Active

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

N-Channel

Single

40

±20

3

80

54

-

3.1

2.1

-

26

4140

$0.7564

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