N-Channel PowerTrench® MOSFET 30V, 19.5A, 5.3mΩ

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Overview

This part number is not recommended for new designs. Please apply NTTFS4C06NTAG as a replacement. This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • Notebook PC
  • Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A
  • Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID= 15.0 A
  • High performance technology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC7678

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

N-Channel

Single

30

20

3

19.5

31

-

6.8

5.3

10

14

1810

Price N/A

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