MOSFETs | FDMC7570S

N-Channel Power Trench® SyncFET™ 25V, 40A, 2mΩ

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Overview

The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A
  • Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A
  • Advanced Package and Combination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • 100% UIL Tested
  • RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC7570S

Active

Pb

A

H

P

PQFN-8

483AK

1

260

REEL

3000

Y

N-Channel

Single

25

20

3

40

59

-

2.9

2

9.5

22

3315

$1.1932

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