MOSFETs | FDMC6696P

P-Channel PowerTrench® MOSFET -20V, -75A, 4.9mΩ

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Overview

This P-Channel MOSFET is produced using ON Semiconductor Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.

  • ° Load Switch° Battery Management° Power Management° Reverse Polarity Protection
  • Max rDS(on) = 4.9 mΩ at VGS = -4.5 V, ID = -18 A
  • Max rDS(on) = 6.5 mΩ at VGS = -2.5 V, ID = -11 A
  • Max rDS(on) =16.4 mΩ at VGS = -1.8 V, ID = -9 A
  • High performance trench technology for extremely low rDS(on)
  • Lead-free and RoHS Compliant
  • High power and current handling capability in a widely used surface mount package

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