P-Channel Power Trench® MOSFET -30V, -20A, 10mΩ

Favorite

Overview

This part number is not recommended for new designs. Please apply NTTFS015P03P8ZTAG as a replacement. The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
  • Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
  • HBM ESD protection level of 8 kV typical(note 3)
  • Extended VGSS range (-25 V) for battery applications
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant

Search

Close Search

Products:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

Loading...

FDMC6679AZ

Active, Not Rec

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

P-Channel

Single

-30

25

-3

-20

41

-

18

10

44

37

2985

$0.4713

More Details

Show More

1-25 of 25

Products per page

Jump to :