N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ

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Overview

This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
  • Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
  • Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC2610

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

200

200

N-Channel

Single

±20

4

9.5

42

-

-

7.1

12.3

720

$0.9144

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