P-Channel QFET® MOSFET -150V, -3A, 1.5Ω

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Overview

These P-Channel MOSFET enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 1.5Ω at VGS = -10V, ID = -1.5A
  • Low Crss ( typical 10pF)
  • Fast Switching
  • Low gate charge ( typical 6.2 nC )
  • Improved dv / dt capability
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC2523P

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

-150

1500

P-Channel

Single

±25

-5

-3

42

-

-

-

6.2

200

$0.5946

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