FDMC008N08C

N-Channel Shielded Gate PowerTrench^® MOSFET 80V, 60A, 7.8mΩ

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Overview

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized to minimise on on-state resistance and yet maintain in class soft body diode

Applications

This product is general usage and suitable for many different applications.

Features

Shielded Gate MOSFET Technology
Max r_DS(on) = 7.8 m at V_GS= 10 V, I_D = 21 A
Max r_DS(on) = 19.3 m at V_GS = 6 V, I_D = 10 A
50% lower Q_rr than other MOSFET suppliers
Lowers switching noise/EMI
MSL1 robust package design
100% UIL tested
RoHS Compliant

Material Composition

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMC008N08C

Active

PQFN-8

483AW

260

REEL

3000

N-Channel

Single

7.8

1535

$0.8414

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDMC008N08C

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 60A, 7.8mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel Shielded Gate PowerTrench^® MOSFET 80V, 60A, 7.8mΩ