P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ

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Overview

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max. RDS(on) = 35mΩ at VGS = -10V, ID = -6.8A
  • Max. RDS(on) = 65mΩ at VGS = -4.5V, ID = -5.0A
  • Low profile -0.8mm maximum -in the new package MicroFET 2X2 mm
  • HBM ESD protection level > 3k V typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA530PZ

Active

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

P-Channel

Single

-30

25

-3

-6.8

2.4

-

65

35

24

9

805

$0.2972

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