P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -6.6A, 42mΩ

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Overview

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • -6.6 A, -20 V
  • RDS(ON) = 42 mΩ @ VGS = -4.5 V
  • RDS(ON) = 58 mΩ @ VGS = -2.5 V
  • RDS(ON) = 98 mΩ @ VGS = -1.8 V
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • Free from halogenated compounds and antimonyoxides
  • RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA291P

Active

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

P-Channel

Single

-20

8

-1

-6.6

2.4

58

42

-

10

10

1000

$0.2108

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