MOSFETs | FDMA1032CZ

20V Complementary PowerTrench® MOSFET

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Overview

This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    3.7 A, 20V
    RDS(ON) = 68 mΩ @ VGS = 4.5V
    RDS(ON) = 86 mΩ @ VGS = 2.5V
  • Q2: P-Channel
    –3.1 A, –20V
    RDS(ON) = 95 mΩ @ VGS = –4.5V
    RDS(ON) = 141 mΩ @ VGS = –2.5V
  • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
  • HBM ESD protection level > 2 kV (Note 3)
  • RoHS Compliant
  • Free from halogenated compounds and antimony oxides

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA1032CZ

Active

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

Y

Complementary

Dual

±20

12

±1.5

N:3.7, P: -3.1

1.4

N: 86, P: 141

N: 68, P: 95

-

2.4

7

540

$0.3436

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