Dual N-Channel PowerTrench® MOSFET 20V, 5.0A, 54mΩ

Favorite

Overview

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A
  • Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A
  • Max rDS(on) = 82 mΩ at VGS= 1.8 V, ID = 2.3 A
  • Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level = 1.6 kV (Note 3)
  • Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
  • RoHS Compliant
  • Free from halogenated compounds and antimonyoxides

Search

Close Search

Products:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

Product

Status

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

Loading...

FDMA1024NZ

Active

Pb

A

H

P

WDFN-6

1

260

REEL

3000

Y

N-Channel

Dual

20

8

1

5

1.4

Q1=Q2=66

Q1=Q2=54

-

4

5.2

375

$0.4503

More Details

Show More

1-25 of 25

Products per page

Jump to :