FDMA1024NZ: Dual N-Channel PowerTrench® MOSFET 20V, 5.0A, 54mΩ

Datasheet: Dual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 m-Ohm
Rev. 2 (503kB)
Product Overview
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Product Change Notification
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
 
  • Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A
  • Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A
  • Max rDS(on) = 82 mΩ at VGS= 1.8 V, ID = 2.3 A
  • Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level = 1.6 kV (Note 3)
  • Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
  • RoHS Compliant
  • Free from halogenated compounds and antimonyoxides
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDMA1024NZ Active
Pb-free
Halide free
FDMA1024NZ WDFN-6 511DA 1 260 Tape and Reel 3000 $0.245
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDMA1024NZ  
 $0.245 
Pb
H
 Active   
N-Channel
Dual
20
8
1
5
1.4
Q1=Q2=66
Q1=Q2=54
-
4
5.2
375
WDFN-6
Case Outlines
511DA   
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