FDG8850NZ: Dual N-Channel PowerTrench® MOSFET 30V, 0.75A, 0.4Ω

Datasheet: Dual N-Channel PowerTrench MOSFET
Rev. 1 (565kB)
Product Overview
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Product Change Notification
This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features
 
  • Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
  • Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
  • Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V)
  • Very small package outline SC70-6
  • RoHS Compliant
Applications
  • This product is general usage and suitable for many different applications.
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDG8850NZ Active
Pb-free
Halide free
FDG8850NZ SC-88-6 / SC-70-6 / SOT-363-6 419AD 1 260 Tape and Reel 3000 $0.1549
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDG8850NZ  
 $0.1549 
Pb
H
 Active   
N-Channel
Dual
30
12
1.5
0.75
0.36
Q1=Q2=500
Q1=Q2=400
Q1=Q2=400
-
1.03
90
SC-88-6 / SC-70-6 / SOT-363-6
Case Outlines
419AD   
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